Study of Hole-mobility Behaviors in Ultra-scaled Silicon Nanowire Field Effect Transistors: Multi-band Monte Carlo Approach
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 류훈 | - |
| dc.contributor.author | 정주영 | - |
| dc.contributor.author | 신민철 | - |
| dc.date.accessioned | 2013-12-06T01:13:49Z | - |
| dc.date.available | 2013-12-06T01:13:49Z | - |
| dc.date.created | 2013-10-11 | - |
| dc.date.issued | 2012-02-17 | - |
| dc.identifier.citation | 제19회 한국반도체학술대회, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/182783 | - |
| dc.language | KOR | - |
| dc.publisher | 한국반도체학술대회 | - |
| dc.title | Study of Hole-mobility Behaviors in Ultra-scaled Silicon Nanowire Field Effect Transistors: Multi-band Monte Carlo Approach | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제19회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 신민철 | - |
| dc.contributor.nonIdAuthor | 류훈 | - |
| dc.contributor.nonIdAuthor | 정주영 | - |
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