NEGF Approach to Surface-Roughness-Limited Mean Free Path in Silicon Nanowire FETs

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dc.contributor.authorHyo-Eun Jung-
dc.contributor.authorShin, Mincheol-
dc.date.accessioned2013-12-06T01:04:11Z-
dc.date.available2013-12-06T01:04:11Z-
dc.date.created2013-10-11-
dc.date.issued2013-10-07-
dc.identifier.citationIEEE Nanotechnology Materials and Devices Conference 2013, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/182630-
dc.languageENG-
dc.publisherNMDC-
dc.titleNEGF Approach to Surface-Roughness-Limited Mean Free Path in Silicon Nanowire FETs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameIEEE Nanotechnology Materials and Devices Conference 2013-
dc.identifier.conferencecountryTaiwan, Province of China-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.nonIdAuthorHyo-Eun Jung-

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