Graphene, a single-atomic layer of carbon network, has been highlighted as a novel two dimensional material with their unique properties and potential applications in electronics. Due to two dimensional sp2 network of carbon in graphene, the electron shows a massless behavior which is described by the Dirac equation. This gives graphene its unique zero band gap property. However, it is possible to engender electronic band gap in graphene via fabricating graphene nanostructures such as graphene quantum dot, graphene nanoribbon and graphene nanomesh. Numerous methods to fabricate graphene nanostructures have been reported. Among the various nanostructures of graphene, graphene quantum dot is at an early developmental stage for practical fabrication. In previous research, graphene quantum dots were typically fabricated by mechanical or chemical subdividing methods from exfoliated graphene oxide or reduced graphene oxide. These methods are simple, and quantum dots obtained by this method are soluble to various solvents. However, controlling the size is a critical challenge.
In this thesis, uniform graphene quantum dots are fabricated via self-assembled block copolymer as an etch mask for the underlying graphene film which was grown by chemical vapor deposition method. Electron microscope images verified that the prepared graphene quantum dots diameters are 10 and 20 nm, corresponding to the size of self-assembled silica nanostructure. Also by the analysis of the Raman spectra and observation of photoluminescence spectra of each step-by-step process supports the fabrication of graphene quantum dots. In the measured photoluminescence spectra, the emission peak of the graphene quantum dots on the SiO2 substrate is shown to be at ~ 395 nm. Oxygen plasma was treated to graphene sheet to verify the effect of oxygen contents to photoluminescence property. In addition, the doping effect to graphene quantum dots was carefully discussed in this thesis.