ArF laser lithography 용 위상 변위 막을 위한 Transition metal (Hf, Zr) oxide, oxynitride 박막의 전자 상태 및 광학 특성 분석The electronic structures and optical properties of transition metal (Hf, Zr) oxide and oxynitride thin films as phase shift mask for ArF laser lithography
- Advisors
- 노광수researcher; No, Kwang-Soo
- Description
- 한국과학기술원 : 신소재공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2006
- Identifier
- 487896/325007 / 020035041
- Language
- kor
- Description
학위논문(박사) - 한국과학기술원 : 신소재공학과, 2006.8, [ xiii, 155 p. ]
- Keywords
전자 상태; 위상 변위 마스크; 광학 특성; HfO2; phase shift mask; electronic structures; optical properties; HfO2; Hf-O-N; Hf-O-N
- Appears in Collection
- MS-Theses_Ph.D.(박사논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.