최적화된 Zn Diffusion 과 p-type Ohmic Contact 공정을 이용한 광통신용 Planar-type InGaAs/InP Avalanche Photodiode 의 제작 및 특성 분석Fabrication and Characterization of Planar-type InGaAs/InP Avalanche Photodiodes using Optimized Zn Diffusion and p-type Ohmic Contact for Optical Communications

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dc.contributor.advisor양경훈-
dc.contributor.advisorYang, Kyoung-Hoon-
dc.contributor.author김철규-
dc.contributor.authorKim, Cheol-Gyu-
dc.date.accessioned2013-09-12T02:00:44Z-
dc.date.available2013-09-12T02:00:44Z-
dc.date.issued2011-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=482791&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/180955-
dc.description학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 2011.8, [ iv, 42 p. ]-
dc.languagekor -
dc.publisher한국과학기술원-
dc.subject애벌런치 포토다이오드-
dc.subject인듐갈륨비소-
dc.subject인듐인-
dc.subject아연 확산-
dc.subjectAPD-
dc.subjectInGaAs-
dc.subjectInP-
dc.subjectZn diffusion-
dc.subjectAvalanche photodiode-
dc.title최적화된 Zn Diffusion 과 p-type Ohmic Contact 공정을 이용한 광통신용 Planar-type InGaAs/InP Avalanche Photodiode 의 제작 및 특성 분석-
dc.title.alternativeFabrication and Characterization of Planar-type InGaAs/InP Avalanche Photodiodes using Optimized Zn Diffusion and p-type Ohmic Contact for Optical Communications-
dc.typeThesis(Master)-
dc.identifier.CNRN482791/325007 -
dc.description.department한국과학기술원 : 전기 및 전자공학과, -
dc.identifier.uid020093141-
dc.contributor.localauthor양경훈-
dc.contributor.localauthorYang, Kyoung-Hoon-
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EE-Theses_Master(석사논문)
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