A novel top surface imaging using photoinduced interfacial reaction of diphenyl siloxane derivatives

Abstract

Top surface imaging(TSI) has been regarded as a novel technique, which provides the extension of resolution capabilities and improving process performance of photoresist materials. A new top surface imaging process has been developed in which spin coated silylating agents on resist film is selectively adsorbed through photoinduced interfacial reaction. This approach used a thin film of amine terminated diphenylsiloxane derivatives at the top and an underlying thick film of non-chemically amplified photoresist (DOBEMA) for pattern transfer. The resist containing diazoketo groups undergo the Wolff rearrangement upon irradiation by the formation of ketene groups. At the same time, the amine-terminated diphenylsiloxane selectively located at the exposed region by amide bonding formation. This liquid phase silylation has certain advantages over gas phase silylation. It gives improving silylation selectivity and silicon density. This paper describes an effort to characterize the fundamental mechanisms underlying the silylation process. The extent of silylation has been measured as a function of exposure dose using atomic force microscope (AFM). Eventually, we successfully obtained the negative tone images featuring 0.15 μm line and space patterns after oxygen reactive ion etching. The use of dry development can be possible the anisotropic pattern fabrication.