Showing results 21 to 26 of 26
MBE growth of wurtzite GaN on LaAlO3 (100) substrate Lee, JJ; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, KY; Kang, TW; et al, JOURNAL OF CRYSTAL GROWTH, v.213, no.1-2, pp.33 - 39, 2000-05 |
Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers Park, JS; Hong, SK; Minegishi, T; Park, SH; Im, IH; Hanada, T; Cho, MW; et al, APPLIED PHYSICS LETTERS, v.90, no.20, pp.173 - 190, 2007-05 |
Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands Ha, Jun-Seok; Lee, Hyo-Jong; Lee, Seog Woo; Lee, Hyun Jae; Lee, Sang Hyun; Goto, Hiroki; Cho, Meoung Whan; et al, APPLIED PHYSICS LETTERS, v.92, no.9, 2008-03 |
Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer Park, DJ; Kim, DC; Lee, JeongYong; Cho, HK, NANOTECHNOLOGY, v.17, pp.5238 - 5243, 2006-10 |
The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al2O3(0001) by plasma assisted molecular beam epitaxy Jung, Yeon Sik; No, YS; Kim, JS; Choi, WK, JOURNAL OF CRYSTAL GROWTH, v.267, pp.85 - 91, 2004-06 |
Two-dimensional growth of ZnO epitaxial films on c-Al2O3(0001) substrates with optimized growth temperature and low-temperature buffer layer by plasma-assisted molecular beam epitaxy Jung, Yeon Sik; Kononenko, O; Kim, JS; Choi, WK, JOURNAL OF CRYSTAL GROWTH, v.274, pp.418 - 424, 2005-02 |
Discover