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Showing results 1 to 4 of 4

1
Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Shin, Byungha; Clemens, Jonathon B.; Kelly, Michael A.; Kummel, Andrew C.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.25, 2010-06

2
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Shin, Byungha; Weber, Justin R.; Long, Rathnait D.; Hurley, Paul K.; Van de Walle, Chris G.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.15, 2010-04

3
Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

Kim, TW; Jung, M; Lee, DU; Oh, E; Lee, SD; Jung, HD; Kim, MD; et al, THIN SOLID FILMS, v.298, no.1-2, pp.187 - 190, 1997-04

4
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009

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