Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject RANDOM-ACCESS MEMORY

Showing results 1 to 6 of 6

1
Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices

Kim, Sung Kyu; Kim, Jong Yoon; Jang, Byung Chul; Cho, Mi Sun; Choi, Sung-Yool; Lee, Jeong Yong; Jeong, Hu-Young, ADVANCED FUNCTIONAL MATERIALS, v.26, no.41, pp.7406 - 7414, 2016-11

2
Current density enhancement nano-contact phase-change memory for low writing current

Yin, You; Hosaka, Sumio; Park, Woon-Ik; Jung, Yeon-Sik; Lee, Keonjae; You, Byoung-Kuk; Liu, Yang; et al, APPLIED PHYSICS LETTERS, v.103, no.3, 2013-07

3
Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films

Yoon, Sung-Min; Choi, Kyu-Jeong; Park, Sang-Hee Ko; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon, INTEGRATED FERROELECTRICS, v.93, no.1, pp.75 - 82, 2007

4
Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; Hur, Yoon Hyoung; Choi, Young Joong; Kwon, Se-Hun; Hong, Daniel Seungbum; et al, CHEMISTRY OF MATERIALS, v.27, no.7, pp.2673 - 2677, 2015-04

5
Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase-change memory

Kim, ET; Lee, JeongYong; Kim, YT, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.3, pp.103 - 105, 2009-05

6
Unconventional Inorganic-Based Memristive Devices for Advanced Intelligent Systems

Sung, Sang Hyun; Kim, Do Hyun; Kim, Tae Jin; Kang, Il-Suk; Lee, Keon Jae, ADVANCED MATERIALS TECHNOLOGIES, v.4, no.4, 2019-04

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