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Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JeongYong; et al, THIN SOLID FILMS, v.444, no.1-2, pp.276 - 281, 2003-11 |
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