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Showing results 1 to 4 of 4

1
EFFECTS OF F+ IMPLANTATION ON THE CHARACTERISTICS OF POLY-SI FILMS AND LOW-TEMPERATURE N-CH POLY-SI THIN-FILM TRANSISTORS

PARK, JW; Ahn, Byung Tae; LEE, K, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.3, pp.1436 - 1441, 1995-03

2
Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

Yoo, Woo Sik; Kim, Jae Hyun; Han, Seung Min J., JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v.13, no.1, 2014-02

3
RECRYSTALLIZATION OF LPCVD AMORPHOUS SI FILMS USING F+ IMPLANTATION

PARK, JW; MOON, DG; Ahn, Byung Tae; Lim, Ho Bin; Lee, Kwyro, THIN SOLID FILMS, v.245, no.1-2, pp.228 - 233, 1994-06

4
Reduction of Leakage Current at the Gate Edge of SDB SO1 NMOS Transistor

Kang, Sung-Weon; Lyu, Jong-Son; Kang, Jin-Young; Kang, Sang-Won; Lee, Jin-Hyo, IEEE ELECTRON DEVICE LETTERS, v.16, no.6, pp.236 - 236, 1995-06

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