Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject MOLECULAR-BEAM-EPITAXY

Showing results 1 to 6 of 6

1
Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures

Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07

2
Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers

Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; et al, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05

3
Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures

Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Jung, M; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5195 - 5199, 2002-04

4
Modeling RHEED intensity oscillations in multilayer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy

Shin, Byungha; Aziz, Michael J., PHYSICAL REVIEW B, v.76, no.16, 2007-10

5
Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

Kim, TW; Jung, M; Lee, DU; Oh, E; Lee, SD; Jung, HD; Kim, MD; et al, THIN SOLID FILMS, v.298, no.1-2, pp.187 - 190, 1997-04

6
ZN INDUCED LAYER DISORDERING IN GAINP/ALINP VISIBLE MULTIQUANTUM-WELL DISTRIBUTED BRAGG REFLECTOR LASER-DIODE

JANG, DH; YOO, JB; KOAK, BH; Lee, JeongYong; KANEKO, Y; KISHINO, K, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.32, no.5B, pp.710 - 712, 1993-05

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