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Ferroelectric properties of lead-free (Bi,La)(4)Ti3O12 thin film deposited on MTP cell structure for high density FeRAM device Cho, KW; Kim, NK; Oh, SH; Choi, ES; Sun, HJ; Yeom, SJ; Lee, KN; et al, ECO-MATERIALS PROCESSING DESIGN VI BOOK SERIES: MATERIALS SCIENCE FORUM, v.486-487, pp.285 - 288, 2005 |
Pre-annealing effects on al metallization properties in high density FeRAM device Cho, KW; Choi, JH; Yu, HS; Kweon, SY; Yeom, SJ; Kim, NK; Choi, ES; et al, INTEGRATED FERROELECTRICS, v.81, pp.113 - 122, 2006 |
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