Showing results 1 to 7 of 7
Effects of growth interruption on high indium content InGaN/GaN multi quantum wells Cheong, MG; Choi, RJ; Kim, CS; Yoon, HS; Hong, CH; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.6, pp.701 - 705, 2001-06 |
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications Kim, KS; Hong, CH; Lee, WH; Kim, CS; Cha, OH; Yang, GM; Suh, EK; et al, 99 fall Material Research Society Symposium, v.5, 1999-12-01 |
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications Kim, KS; Hong, CH; Lee, WH; Kim, CS; Cha, OH; Yang, GM; Suh, EK; et al, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.11 - 74, 2000-01 |
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures Kim, CS; Hong, YK; Hong, CH; Suh, EK; Lee, HJ; Kim, MH; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.183 - 186, 2001-11 |
Nano-scale island (dot)-induced optical emission in InGaN quantum wells Kim, KS; Lee, WH; Kim, CS; Yang, GM; Hong, CH; Suh, EK; Lim, KY; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.141 - 146, 2001-07 |
Prerequisite for photoluminescence D line spectra of heat-treated carbon-lean Czochralski silicon crystals Cho, KH; Lee, JeongYong; Suh, EK; Kim, KW, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.1A, pp.1 - 5, 1997-01 |
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07 |
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