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1
Formation and properties of epitaxial CoSi2 layers on p-Si0.83Ge0.17/p-Si(001) using a Si capping layer by metal-organic chemical vapor deposition

Ban, SH; Shin, DO; Ahn, YS; Ahn, Byung Tae; Shim, KH; Lee, NE, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, pp.3350 - 3353, 2003-06

2
High-quality epitaxial growth of in situ phosphorus-doped Si films by promoting dispersion of native oxides in alpha-Si

Kim, HS; Shim, KH; Lee, SY; Lee, JeongYong; Kang, JY, JOURNAL OF CRYSTAL GROWTH, v.212, no.3-4, pp.423 - 428, 2000-05

3
Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers

Shim, KH; Kim, HS; Lee, JeongYong; Kang, JY; Song, MK, THIN SOLID FILMS, v.369, no.1-2, pp.185 - 188, 2000-07

4
Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)

Shin, DO; Ahn, YS; Ban, SH; Lee, NE; Ahn, Byung Tae; Kim, SH; Shim, KH; et al, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.89, no.1-3, pp.279 - 283, 2002-02

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