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GROWTH OF EPITAXIAL C54 TISI2 ON SI(111) SUBSTRATE BY INSITU ANNEALING IN ULTRAHIGH-VACUUM KIM, KH; LEE, JJ; SEO, DJ; CHOI, CK; HONG, SR; KOH, JD; KIM, SC; et al, JOURNAL OF APPLIED PHYSICS, v.71, no.8, pp.3812 - 3815, 1992-04 |
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