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Showing results 1 to 8 of 8

1
Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Nam, Yunyong; Kim, Hee-Ok; Cho, Sung Haeng; Hwang, Chi-Sun; Kim, Taeho; Jeon, Sanghun; Park, Sang-Hee Ko, Journal of Information Display, v.17, no.2, pp.65 - 71, 2016-04

2
Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia

Yun, Seokjung; Kim, Hoon; Seo, Myungsoo; Kang, Min-Ho; Kim, Taeho; Cho, Seongwoo; Park, Ming Hyuk; et al, ACS APPLIED ELECTRONIC MATERIALS, v.6, no.4, pp.2134 - 2141, 2024-03

3
Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.32, 2016-08

4
Manganese Oxide Overlayers Promote CO Oxidation on Pt

Lee, Siwon; Lin, Chao; Kim, Seunghyun; Mao, Xinyu; Kim, Taeho; Kim, Sang-Joon; Gorte, Raymond J.; et al, ACS CATALYSIS, v.11, no.22, pp.13935 - 13946, 2021-11

5
Orientation-Dependent Hydration Structures at Yttria-Stabilized Cubic Zirconia Surfaces

Hou, Binyang; Kim, Seunghyun; Kim, Taeho; Park, Changyong; Bahn, Chi Bum; Kim, Jongjin; Hong, Seungbum; et al, JOURNAL OF PHYSICAL CHEMISTRY C, v.120, no.51, pp.29089 - 29097, 2016-12

6
The effects of iron oxide overlayers on Pt for CO oxidation

Lee, Siwon; Kim, Seunghyun; Kim, Taeho; Lin, Chao; Lee, Woo-Jae; Kim, Sang-Joon; Gorte, Raymond J.; et al, CATALYSIS COMMUNICATIONS, v.172, 2022-12

7
The Hydration Structure at Yttria-Stabilized Cubic Zirconia (110)-Water Interface with Sub-Angstrom Resolution

Hou, Binyang; Kim, Seunghyun; Park, Changyong; Kim, Taeho; Kim, Jongjin; Hong, Daniel Seungbum; Bahn, Chi Bum; et al, SCIENTIFIC REPORTS, v.6, 2016-06

8
The Influence of Hydrogen on Defects of In-Ga-Zn-O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3

Kim, Taeho; Nam, Yunyong; Hur, Jihyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.37, no.9, pp.1131 - 1134, 2016-09

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