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Gd-substituted bismuth titanate film capacitors having ferroelectric reliability and large non-volatile charges Chon, U; Jang, HM; Shin, NS; Kim, JS; Ahn, DC; Kim, YS; No, Kwangsoo, PHYSICA B-CONDENSED MATTER, v.388, pp.190 - 194, 2007-01 |
Nucleation behavior in the presence of charge in the CVD diamond process Choi, K; Kang, Suk-Joong L; Jang, HM; Hwang, NM, JOURNAL OF CRYSTAL GROWTH, v.172, no.3-4, pp.416 - 425, 1997-03 |
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