Showing results 1 to 13 of 13
A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors![]() Xu, Nuo; Park, Tae Gyun; Kim, Hae Jin; Shao, Xinglong; Yoon, Kyung Jean; Park, Tae Hyung; Fang, Liang; et al, ADVANCED INTELLIGENT SYSTEMS, v.2, no.1, pp.1900082, 2020-01 |
An artificial nociceptor based on a diffusive memristor Yoon, Jung Ho; Wang, Zhongrui; Kim, Kyung Min; Wu, Huaqiang; Ravichandran, Vignesh; Xia, Qiangfei; Hwang, Cheol Seong; et al, NATURE COMMUNICATIONS, v.9, pp.417, 2018-01 |
Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network Kim, Gil Seop; Song, Hanchan; Lee, Yoon Kyeung; Kim, Ji Hun; Kim, Woohyun; Park, Tae Hyung; Kim, Hae Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.50, pp.47063 - 47072, 2019-12 |
Demonstration of Neuromodulation-inspired Stashing System for Energy-efficient Learning of Spiking Neural Network using a Self-Rectifying Memristor Array Cheong, Woon Hyung; Jeon, Jae Bum; In, Jae Hyun; Kim, Geunyoung; Song, Hanchan; An, Janho; Park, Juseong; et al, ADVANCED FUNCTIONAL MATERIALS, v.32, no.29, 2022-07 |
Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device Kim, Gun Hwan; Ju, Hyunsu; Yang, Min Kyu; Lee, Dong Kyu; Choi, Ji Woon; Jang, Jae Hyuck; Lee, Sang Gil; et al, SMALL, v.13, no.40, 2017-10 |
Fully Functional Logic-In-Memory Operations Based on a Reconfigurable Finite-State Machine Using a Single Memristor Xu, Nuo; Yoon, Kyung Jean; Kim, Kyung Min; Fang, Liang; Hwang, Cheol Seong, ADVANCED ELECTRONIC MATERIALS, v.4, no.11, 2018-11 |
Modified Dynamic Physical Model of Valence Change Mechanism Memristors Park, Juseong; Choi, Jungwoo; Kim, Gwangmin; Kim, Geunyoung; Kim, Gil Seop; Song, Hanchan; Kim, Yeong Seok; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.31, pp.35949 - 35958, 2022-08 |
Nociceptive Memristor Kim, Yumin; Kwon, Young Jae; Kwon, Dae Eun; Yoon, Kyung Jean; Yoon, Jung Ho; Yoo, Sijung; Kim, Hae Jin; et al, ADVANCED MATERIALS, v.30, no.8, pp.1704320, 2018-02 |
Properties of MIS capacitors using the atomic-layer-deposited ZnO semiconductor and Al(2)O(3) insulator Song, Jaewon; Oh, Him Chan; Park, Tae Joo; Hwang, Cheol Seong; Park, Sang-Hee Ko; Yoon, Sung Min; Hwangb, Chi-Sun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.11, pp.858 - 863, 2008 |
Single-Cell Stateful Logic Using a Dual-Bit Memristor Kim, Kyung Min; Xu, Nuo; Shao, Xinglong; Yoon, Kyung Jean; Kim, Hae Jin; Williams, R. Stanley; Hwang, Cheol Seong, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.13, no.3, 2019-03 |
Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment Yang, Shinhyuk; Ji, Kwang Hwan; Kim, Un Ki; Hwang, Cheol Seong; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; et al, APPLIED PHYSICS LETTERS, v.99, no.10, 2011-09 |
Time-Efficient Stateful Dual-Bit-Memristor Logic Xu, Nuo; Fang, Liang; Kim, Kyung Min; Hwang, Cheol Seong, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.13, no.6, 2019-06 |
X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells Chang, Seo Hyoung; Kim, Jungho; Phatak, Charudatta; D''Aquila, Kenneth; Kim, Seong Keun; Kim, Jiyoon; Song, Seul Ji; et al, ACS NANO, v.8, no.2, pp.1584 - 1589, 2014-02 |
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