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Showing results 1 to 13 of 13

1
Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-xTe epilayers grown on GaAs substrates

Kim, TW; Lee, DU; Choo, DC; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.7, pp.922 - 924, 2001-02

2
Coexistence of the Cu3Au type ordered structure and the fine modulation in CdxZn1-xTe epilayers grown on GaAs substrates

Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Park, HL, APPLIED PHYSICS LETTERS, v.81, no.17, pp.3200 - 3202, 2002-10

3
Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

Kim, TW; Lee, DU; Choo, DC; Lim, YS; Lee, HS; Lee, JeongYong; Lim, H, SOLID STATE COMMUNICATIONS, v.117, no.8, pp.501 - 504, 2001-02

4
CuPt-type ordering and ordered domains in CdxZn1-xTe epilayers grown on ZnTe buffer layers

Lee, HS; Lee, JeongYong; Choo, DC; Kim, TW; Park, HL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S412 - S415, 2003-02

5
Dependence of the InAs size distribution on the growth times for vertically stacked InAs/GaAs quantum dots

Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, pp.483 - 486, 2002-10

6
Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05

7
Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities

Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Park, HL, JOURNAL OF APPLIED PHYSICS, v.90, no.8, pp.4027 - 4031, 2001-10

8
Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures

Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07

9
Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers

Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; et al, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05

10
Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures

Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Jung, M; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5195 - 5199, 2002-04

11
Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures

Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, pp.115 - 118, 2002-01

12
Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process

Kim, TW; Choo, DC; Shim, JH; Jung, M; Kang, SO; Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.79, no.1, pp.120 - 122, 2001-07

13
Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660, 2002-05

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