Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Bak, Jun Yong
Showing results 1 to 6 of 6
| Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors Bak, Jun Yong; Yoon, Sung Min; Yang, Shinhyuk; Kim, Gi Heon; Park, Sang-Hee Ko; Hwang, Chi-Sun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4, 2012-07 |
| Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In-Ga-Zn-O Thin-Film Transistors Bak, Jun Yong; Yang, Sinhyuk; Ryu, Min Ki; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, ACS APPLIED MATERIALS & INTERFACES, v.4, no.10, pp.5369 - 5374, 2012-10 |
| Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu,Min-Ki; Park, Sang-Hee Ko; Hwang,Chi-Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.7, pp.2404 - 2411, 2014-07 |
| Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance Yang, Shinhyuk; Bak, Jun Yong; Yoon, Sung-Min; Ryu, Min Ki; Oh, Himchan; Hwang, Chi-Sun; Kim, Gi Heon; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.12, pp.1692 - 1694, 2011-12 |
| Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In-Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures Bak, Jun Yong; Yang, Shinhyuk; Ryu, Ho-Jun; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.79 - 86, 2014-01 |
| Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu, Min-Ki; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.357 - 359, 2014-03 |
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