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Showing results 1 to 5 of 5

1
A Distributed Model for Border Traps in Al2O3 - InGaAs MOS Devices

Yuan, Yu; Wang, Lingquan; Yu, Bo; Shin, Byungha; Ahn, Jaesoo; McIntyre, Paul C.; Asbeck, Peter M.; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.485 - 487, 2011-04

2
Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric

Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04

3
Highly Reliable Magnetic Memory-Based Physical Unclonable Functions

Kang, Jaimin; Han, Donghyeon; Lee, Kyungchul; Ko, San; Koh, Daekyu; Park, Chando; Ahn, Jaesoo; et al, ACS NANO, v.18, no.20, pp.12853 - 12860, 2024-05

4
III-V nMOSFETs - Some issues associated with roadmap worthiness (invited)

Thayne, Iain; Bentley, Steven; Holland, Martin; Jansen, Wout; Li, Xu; Macintyre, Douglas; Thoms, Stephen; et al, MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1070 - 1075, 2011-07

5
Spintronic physical unclonable functions based on magneto-resistive memory

Kang, Jaimin; HAN, DONGHYEON; Koh, Daekyu; Ko, San; Lee, kyungchul; Lee, Jisu; Park, Chando; et al, The 68th Annual Conference on Magnetism and Magnetic Materials, IEEE magnetics, AIP publishing, 2023-11-02

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