Showing results 1 to 3 of 3
Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04 |
Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application Hasan, Musarrat; Yun, Sun Jin; Koo, Jae Bon; Park, Sang Hee Ko; Kim, Yong Hae; Kang, Seung Youl; Rho, Jonghyun; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.3, pp.80 - 82, 2010 |
원자층증착법에 의한 $HfO_2$ 게이트절연막의 성장과 플라즈마처리에 의한 질화에 관한 연구 = Study on $HfO_2$ gate dielectric grown by atomic layer deposition and its nitridation by plasma treatmentlink 박건식; Park, Kun-Sik; et al, 한국과학기술원, 2011 |
Discover