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ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Dora, Y; Han, S; Klenov, D; Hansen, PJ; No, Kwangsoo; Mishra, UK; Stemmer, S; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, pp.575 - 581, 2006-03 |
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