Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject PASSIVATION
Showing results 12 to 16 of 16
| Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors Lee, Ju-Ho; Ahn, Cheol-Hyoun; Hwang, Soo-Yeon; Woo, Chang-Ho; Park, Jin-Seong; Cho, Hyung-Koun; Lee, Jeong-Yong, THIN SOLID FILMS, v.519, pp.6801 - 6805, 2011-08 |
| THE ANODIC BEHAVIOR OF HOT-GALVANIZED ZINC LAYER IN ALKALINE-SOLUTION Pyun, Su Il; BAE, JS; PARK, SY; KIM, JS; Lee, Zin-Hyoung, CORROSION SCIENCE, v.36, no.5, pp.827 - 835, 1994-05 |
| The effects of surface treatment for ZnS : Ag,Cl using a combination of stirring and ultrasonication in KOH solutions Lee, DC; Bukesov, SA; Lee, S; Kang, JH; Jeon, DukYoung; Park, DH; Kim, JY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.11, pp.227 - 231, 2004 |
| Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009 |
| ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Dora, Y; Han, S; Klenov, D; Hansen, PJ; No, Kwangsoo; Mishra, UK; Stemmer, S; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, pp.575 - 581, 2006-03 |
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