Showing results 9 to 16 of 16
Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator Kim, Yujin; Lee, Kwang Heum; Mun, Geumbi; Park, Kyeongwoo; Park, Sang-Hee Ko, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.12, 2017-12 |
Perovskite-polymer composite cross-linker approach for highly-stable and efficient perovskite solar cells![]() Han, Tae-Hee; Lee, Jin-Wook; Choi, Chungseok; Tan, Shaun; Lee, Changsoo; Zhao, Yepin; Dai, Zhenghong; et al, NATURE COMMUNICATIONS, v.10, 2019-01 |
Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors Ko, Jong Beom; Yeom, Hye In; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.37, no.1, pp.39 - 42, 2016-01 |
Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors Lee, Ju-Ho; Ahn, Cheol-Hyoun; Hwang, Soo-Yeon; Woo, Chang-Ho; Park, Jin-Seong; Cho, Hyung-Koun; Lee, Jeong-Yong, THIN SOLID FILMS, v.519, pp.6801 - 6805, 2011-08 |
THE ANODIC BEHAVIOR OF HOT-GALVANIZED ZINC LAYER IN ALKALINE-SOLUTION Pyun, Su Il; BAE, JS; PARK, SY; KIM, JS; Lee, Zin-Hyoung, CORROSION SCIENCE, v.36, no.5, pp.827 - 835, 1994-05 |
The effects of surface treatment for ZnS : Ag,Cl using a combination of stirring and ultrasonication in KOH solutions Lee, DC; Bukesov, SA; Lee, S; Kang, JH; Jeon, DukYoung; Park, DH; Kim, JY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.11, pp.227 - 231, 2004 |
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009 |
ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors Dora, Y; Han, S; Klenov, D; Hansen, PJ; No, Kwangsoo; Mishra, UK; Stemmer, S; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, pp.575 - 581, 2006-03 |
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