Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject SAPPHIRE

Showing results 19 to 26 of 26

19
Low temperature epitaxial growth and characterization of Ga-doped ZnO thin films on Al2O3 (0001) substrates prepared with different buffer layers

Shin, Seung Wook; Agawane, G. L.; Kim, In Young; Kwon, Ye Bin; Jung, In Ok; Gang, Myeng Gil; Moholkar, A. V.; et al, APPLIED SURFACE SCIENCE, v.258, no.12, pp.5073 - 5079, 2012-04

20
Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy

Jung, Yeon Sik; Choi, WK; Kononenko, OV; Panin, GN, JOURNAL OF APPLIED PHYSICS, v.99, no.1, pp.365 - 370, 2006-01

21
MBE growth of wurtzite GaN on LaAlO3 (100) substrate

Lee, JJ; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, KY; Kang, TW; et al, JOURNAL OF CRYSTAL GROWTH, v.213, no.1-2, pp.33 - 39, 2000-05

22
Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers

Park, JS; Hong, SK; Minegishi, T; Park, SH; Im, IH; Hanada, T; Cho, MW; et al, APPLIED PHYSICS LETTERS, v.90, no.20, pp.173 - 190, 2007-05

23
Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands

Ha, Jun-Seok; Lee, Hyo-Jong; Lee, Seog Woo; Lee, Hyun Jae; Lee, Sang Hyun; Goto, Hiroki; Cho, Meoung Whan; et al, APPLIED PHYSICS LETTERS, v.92, no.9, 2008-03

24
Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

Park, DJ; Kim, DC; Lee, JeongYong; Cho, HK, NANOTECHNOLOGY, v.17, pp.5238 - 5243, 2006-10

25
The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al2O3(0001) by plasma assisted molecular beam epitaxy

Jung, Yeon Sik; No, YS; Kim, JS; Choi, WK, JOURNAL OF CRYSTAL GROWTH, v.267, pp.85 - 91, 2004-06

26
Two-dimensional growth of ZnO epitaxial films on c-Al2O3(0001) substrates with optimized growth temperature and low-temperature buffer layer by plasma-assisted molecular beam epitaxy

Jung, Yeon Sik; Kononenko, O; Kim, JS; Choi, WK, JOURNAL OF CRYSTAL GROWTH, v.274, pp.418 - 424, 2005-02

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