Showing results 3 to 4 of 4
Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers Shim, KH; Kim, HS; Lee, JeongYong; Kang, JY; Song, MK, THIN SOLID FILMS, v.369, no.1-2, pp.185 - 188, 2000-07 |
Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001) Shin, DO; Ahn, YS; Ban, SH; Lee, NE; Ahn, Byung Tae; Kim, SH; Shim, KH; et al, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.89, no.1-3, pp.279 - 283, 2002-02 |
Discover