Showing results 3 to 6 of 6
Impact of Charge-Trap Layer Conductivity Control on Device Performances of Top-Gate Memory Thin-Film Transistors Using IGZO Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu,Min-Ki; Park, Sang-Hee Ko; Hwang,Chi-Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.7, pp.2404 - 2411, 2014-07 |
Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance Yang, Shinhyuk; Bak, Jun Yong; Yoon, Sung-Min; Ryu, Min Ki; Oh, Himchan; Hwang, Chi-Sun; Kim, Gi Heon; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.12, pp.1692 - 1694, 2011-12 |
Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In-Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures Bak, Jun Yong; Yang, Shinhyuk; Ryu, Ho-Jun; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.79 - 86, 2014-01 |
Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In-Ga-Zn-O Active Channel and ZnO Charge-Trap Layer Bak, Jun Yong; Ryu, Min-Ki; Park, Sang Hee Ko; Hwang, Chi Sun; Yoon, Sung Min, IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.357 - 359, 2014-03 |
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