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Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JeongYong; et al, THIN SOLID FILMS, v.444, no.1-2, pp.276 - 281, 2003-11 |
The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JeongYong, THIN SOLID FILMS, v.388, no.1-2, pp.226 - 230, 2001-06 |
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