A novel method for fabrication of polymer gate dielectric via solvent-free initiated chemical vapor deposition (iCVD)

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dc.contributor.authorIm, SungGap-
dc.contributor.authorSeong, Hyejeong-
dc.contributor.authorMoon, Hanul-
dc.contributor.authorKim, Min Cheol-
dc.contributor.authorYoo, Seunghyup-
dc.date.accessioned2013-08-22T05:25:19Z-
dc.date.available2013-08-22T05:25:19Z-
dc.date.created2013-07-19-
dc.date.issued2012-10-25-
dc.identifier.citation한국화학공학회 2012년 추계학술대회, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/175971-
dc.languageKOR-
dc.publisher한국화학공학회-
dc.titleA novel method for fabrication of polymer gate dielectric via solvent-free initiated chemical vapor deposition (iCVD)-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname한국화학공학회 2012년 추계학술대회-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorIm, SungGap-
dc.contributor.nonIdAuthorSeong, Hyejeong-
dc.contributor.nonIdAuthorMoon, Hanul-
dc.contributor.nonIdAuthorKim, Min Cheol-
dc.contributor.nonIdAuthorYoo, Seunghyup-

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