A high supply voltage bandgap reference circuit using drain-extended MOS devices

Abstract

A bandgap reference circuit that uses high-voltage drain-extended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18 mu m high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD variation from 5V to 30V and for the temperature variation from -40 degrees C to +140 degrees C were 1.16mV/V and 0.84mV/degrees C, respectively. The measured reference voltage with the supply voltage of 15V at room temperature was 2.487 V. The current consumption and the active area were 3.2 mu A and 320 x 345 mu m(2), respectively.