Enhanced ionized impurity scattering in nanowires

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The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Bjork et al. [Nature Nanotech. 4, 103 (2009)]. (C) 2013 AIP Publishing LLC.
Publisher
AMER INST PHYSICS
Issue Date
2013-06
Language
English
Article Type
Article
Keywords

SILICON NANOWIRES; QUANTUM WIRES; SI NANOWIRES; SEMICONDUCTORS; TRANSPORT; FORMALISM; EXCITONS; STATES

Citation

JOURNAL OF APPLIED PHYSICS, v.113, no.23, pp.233706-1 - 233706-7

ISSN
0021-8979
DOI
10.1063/1.4811534
URI
http://hdl.handle.net/10203/175512
Appears in Collection
EE-Journal Papers(저널논문)
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