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A class-E CMOS RF power amplifier with cascaded class-D driver amplifier

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dc.contributor.authorJang, Jaeminko
dc.contributor.authorLee, Hongtakko
dc.contributor.authorPark, Changkunko
dc.contributor.authorHong, Songcheolko
dc.date.accessioned2013-08-14T01:32:59Z-
dc.date.available2013-08-14T01:32:59Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-02-
dc.identifier.citationMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.50, no.2, pp.470 - 473-
dc.identifier.issn0895-2477-
dc.identifier.urihttp://hdl.handle.net/10203/175078-
dc.description.abstractA 800-MHz power amplifier is designed using a 0.18-mu m RF CMOS process. The voltage-combining Method is used for power combining. A transmission line transformer on a printed circuit board (PCB) is designed as a power combiner. For the switching mode power amplifier, a cascaded class-D driver amplifier is proposed using a feedback resistor and a DC-blocking capacitor. The power amplifier has an output power of 32.9 dBm and a power-added efficiency of 60.25%. (c) 2007 Wiley Periodicals, Inc.-
dc.languageEnglish-
dc.publisherWiley-Blackwell-
dc.subjectDISTRIBUTED ACTIVE-TRANSFORMER-
dc.subjectMODULATOR-
dc.titleA class-E CMOS RF power amplifier with cascaded class-D driver amplifier-
dc.typeArticle-
dc.identifier.wosid000252234000064-
dc.identifier.scopusid2-s2.0-38849109403-
dc.type.rimsART-
dc.citation.volume50-
dc.citation.issue2-
dc.citation.beginningpage470-
dc.citation.endingpage473-
dc.citation.publicationnameMICROWAVE AND OPTICAL TECHNOLOGY LETTERS-
dc.identifier.doi10.1002/mop.23106-
dc.contributor.localauthorHong, Songcheol-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorclass-D-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthordriver amplifier-
dc.subject.keywordAuthorPCB-
dc.subject.keywordAuthorpower amplifier-
dc.subject.keywordAuthortransmission line transformer-
dc.subject.keywordPlusDISTRIBUTED ACTIVE-TRANSFORMER-
dc.subject.keywordPlusMODULATOR-
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EE-Journal Papers(저널논문)
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