On-chip temperature compensation for optical transmitter modules

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dc.contributor.authorSangirov, Jamshidko
dc.contributor.authorPark, T. -W.ko
dc.contributor.authorUkaegbu, Ikechi Augustineko
dc.contributor.authorLee, T. -W.ko
dc.contributor.authorPark, Hyo-Hoonko
dc.date.accessioned2013-08-08T06:06:32Z-
dc.date.available2013-08-08T06:06:32Z-
dc.date.created2013-06-05-
dc.date.created2013-06-05-
dc.date.issued2013-01-
dc.identifier.citationELECTRONICS LETTERS, v.49, no.3, pp.202 - 203-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/174913-
dc.description.abstractOn-chip temperature compensation (TC) for optical transmitter (Tx) modules is reported. The TC block is integrated in common silicon (Si)-substrate with the Tx and demonstrates the ability to maintain a constant VCSEL output light power without an additional monitoring photodiode. Designed and fabricated in a 0.13 mu m technology, the Tx with a TC block operates at up to 5 Gbit/s. A BER of less than 10(-12) is achieved at a received input power of -3 dBm, with a 1.3 dBm variation of received power for a temperature increase of 20-100 degrees C at 5 Gbit/s data rate. The percentage error of the temperature compensated Tx output light power is +/- 3%. The Tx module consumes a power of 20 mW at 1.3 V, including the TC block.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleOn-chip temperature compensation for optical transmitter modules-
dc.typeArticle-
dc.identifier.wosid000318542500026-
dc.identifier.scopusid2-s2.0-84877727522-
dc.type.rimsART-
dc.citation.volume49-
dc.citation.issue3-
dc.citation.beginningpage202-
dc.citation.endingpage203-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2012.3350-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorPark, Hyo-Hoon-
dc.contributor.nonIdAuthorPark, T. -W.-
dc.contributor.nonIdAuthorLee, T. -W.-
dc.type.journalArticleArticle-
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