High-Linearity K-Band Absorptive-Type MMIC Switch Using GaN PIN-Diodes

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This letter describes the design and fabrication of a high-linearity GaN PIN MMIC switch. In order to achieve good input/output matching and high-linearity characteristics at the K-band, a GaN PIN-diode-based switch was employed with an absorptive-type topology. The fabricated GaN PIN MMIC switch demonstrated good performance characteristics such as input/output return losses of higher than 10.5 dB and a high IIP3 of 52.0 dBm. To our knowledge, this is the first GaN PIN-diode based MMIC switch demonstrated up to the K-band.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2013-01
Language
English
Article Type
Article
Keywords

SPDT SWITCH

Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.23, no.1, pp.37 - 39

ISSN
1531-1309
DOI
10.1109/LMWC.2012.2234732
URI
http://hdl.handle.net/10203/174903
Appears in Collection
EE-Journal Papers(저널논문)
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