DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Ji-Min | ko |
dc.contributor.author | Kim, Moon-Seok | ko |
dc.contributor.author | Seol, Myeong-Lok | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-08-08T06:00:54Z | - |
dc.date.available | 2013-08-08T06:00:54Z | - |
dc.date.created | 2013-06-24 | - |
dc.date.created | 2013-06-24 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.7, no.5, pp.326 - 331 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174750 | - |
dc.description.abstract | Electronic devices on unconventional substrates are attractive beyond the conventional solid-state rigid electronic system or even flexible electronics. Here, by use of the transfer printing technique, we report the memory devices onto a range of unconventional substrates, including paper, an insect (cicada), glass, polyethersulphone, polyimide, double-sided tape, Al foil, fabric, a mask, a leather wallet, a name card, a banknote, a latex glove, and a squeezed plastic bottle. The device can be possibly realized on any substrate. The memory structure used in this work is non-volatile resistive random access memory (RRAM). Constraints imposed by process compatibility between the substrates and device materials are completely eliminated by the use of the transfer printing techniques. It is confirmed that the electrical characteristics of the RRAM devices do not degrade during the transfer process. Stable resistive switching properties, reliable endurance levels, and good retention characteristics are demonstrated. The mechanical stability is also analysed and an encapsulation protection layer on top of the memory devices is suggested for long-term reliability. The possibility of the realization of integrated electronic systems onto various substrates will enable the versatile use of these electronics anywhere and anytime in many different environments. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | RESISTIVE SWITCHING MEMORIES | - |
dc.subject | SILICON INTEGRATED-CIRCUITS | - |
dc.subject | ORGANIC NONVOLATILE MEMORY | - |
dc.subject | STRETCHABLE ELECTRONICS | - |
dc.subject | PAPER | - |
dc.subject | FABRICATION | - |
dc.subject | FILMS | - |
dc.title | Transfer of functional memory devices to any substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000318984500009 | - |
dc.identifier.scopusid | 2-s2.0-84877904336 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 326 | - |
dc.citation.endingpage | 331 | - |
dc.citation.publicationname | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.identifier.doi | 10.1002/pssr.201307084 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Choi, Ji-Min | - |
dc.contributor.nonIdAuthor | Kim, Moon-Seok | - |
dc.contributor.nonIdAuthor | Seol, Myeong-Lok | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | non-volatile memory | - |
dc.subject.keywordAuthor | resistive memory | - |
dc.subject.keywordAuthor | transfer printing | - |
dc.subject.keywordAuthor | unconventional substrates | - |
dc.subject.keywordPlus | RESISTIVE SWITCHING MEMORIES | - |
dc.subject.keywordPlus | SILICON INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | ORGANIC NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | STRETCHABLE ELECTRONICS | - |
dc.subject.keywordPlus | PAPER | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | FILMS | - |
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