DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chandramohan, S. | ko |
dc.contributor.author | Kang, Ji Hye | ko |
dc.contributor.author | Ryu, Beo Deul | ko |
dc.contributor.author | Yang, Jong Han | ko |
dc.contributor.author | Kim, Seongjun | ko |
dc.contributor.author | Kim, Hynsoo | ko |
dc.contributor.author | Park, Jong Bae | ko |
dc.contributor.author | Kim, Taek Yong | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Suh, Eun-Kyung | ko |
dc.contributor.author | Hong, Chang-Hee | ko |
dc.date.accessioned | 2013-08-08T05:45:36Z | - |
dc.date.available | 2013-08-08T05:45:36Z | - |
dc.date.created | 2013-03-25 | - |
dc.date.created | 2013-03-25 | - |
dc.date.issued | 2013-02 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.5, no.3, pp.958 - 964 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174589 | - |
dc.description.abstract | This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. Current voltage characteristics of the graphene/p-GaN contacts with ultrathin Au, Ni, and NiOx interlayers were studied using transmission line model with circular contact geometry. Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Ohmic contact formation was realized when interlayer is introduced between the graphene and p-GaN followed by postmetallization annealing. Temperature-dependent I V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. The tunneling mechanism results from the interfacial reactions that occur between the metal and p-GaN during the postmetallization annealing. InGaN/GaN light-emitting diodes with NiOx/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power. X-ray photoelectron spectroscopy provided evidence for the occurrence of phase transformation in the graphene-encased NiOx during the postmetallization annealing. The observed low light output is therefore correlated to the phase change induced transmittance loss in the NiOx/graphene electrode. These findings provide new insights into the behavior of different interlayers under processing conditions that will be useful for the future development of opto-electronic devices with graphene-based electrodes. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | THIN-FILMS | - |
dc.subject | GRAPHENE | - |
dc.subject | DEPOSITION | - |
dc.title | Impact of Inter layer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode | - |
dc.type | Article | - |
dc.identifier.wosid | 000315079700065 | - |
dc.identifier.scopusid | 2-s2.0-84873658508 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 958 | - |
dc.citation.endingpage | 964 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/am3026079 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Chandramohan, S. | - |
dc.contributor.nonIdAuthor | Kang, Ji Hye | - |
dc.contributor.nonIdAuthor | Ryu, Beo Deul | - |
dc.contributor.nonIdAuthor | Yang, Jong Han | - |
dc.contributor.nonIdAuthor | Kim, Seongjun | - |
dc.contributor.nonIdAuthor | Kim, Hynsoo | - |
dc.contributor.nonIdAuthor | Park, Jong Bae | - |
dc.contributor.nonIdAuthor | Kim, Taek Yong | - |
dc.contributor.nonIdAuthor | Suh, Eun-Kyung | - |
dc.contributor.nonIdAuthor | Hong, Chang-Hee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | ohmic contact | - |
dc.subject.keywordAuthor | interlayer | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | NiOx/graphene | - |
dc.subject.keywordAuthor | light-emitting diode | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | DEPOSITION | - |
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