DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kwang-Ho | ko |
dc.contributor.author | Lee, Sang-Woo | ko |
dc.contributor.author | Lyu, Jong-Son | ko |
dc.contributor.author | Kim, Bo-Woo | ko |
dc.contributor.author | Yoo, Hyung Joun | ko |
dc.date.accessioned | 2013-08-08T04:08:23Z | - |
dc.date.available | 2013-08-08T04:08:23Z | - |
dc.date.created | 2013-07-31 | - |
dc.date.created | 2013-07-31 | - |
dc.date.issued | 1998-02 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, pp.1508 - 4 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174268 | - |
dc.description.abstract | Use of a rapid thermal annealing technique is shown to improve the electrical and structural properties of LiNbO3/Si (100) structures. The lithium niobate film was deposited in an RF magnetron sputtering system with wafer-type of LiNbO3 target added Li2O at a substrate temperature of below 300 degrees C. A post-deposition annealing was conducted for 60 seconds at 600 degrees C. The rapid thermal annealed films were changed to polycrystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO3 film increased from a typical value of 1 similar to 2 x10(8) Omega.cm before the annealing to about 1x10(13) Omega.cm at 500 kV/cm and reduced the interface state density of the LiNbO3/Si(100) interface to about 1x10(11)/cm(2).eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization and coercive field values of about 1.2 mu C/cm(2) and 120 kV/cm, respectively. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | BAMGF4 | - |
dc.subject | SI(100) | - |
dc.subject | GROWTH | - |
dc.title | Properties of lithium niobate thin films by RF magnetron sputtering with wafer target | - |
dc.type | Article | - |
dc.identifier.wosid | 000072212400057 | - |
dc.identifier.scopusid | 2-s2.0-0032388069 | - |
dc.type.rims | ART | - |
dc.citation.volume | 32 | - |
dc.citation.beginningpage | 1508 | - |
dc.citation.endingpage | 4 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Yoo, Hyung Joun | - |
dc.contributor.nonIdAuthor | Kim, Kwang-Ho | - |
dc.contributor.nonIdAuthor | Lee, Sang-Woo | - |
dc.contributor.nonIdAuthor | Lyu, Jong-Son | - |
dc.contributor.nonIdAuthor | Kim, Bo-Woo | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | BAMGF4 | - |
dc.subject.keywordPlus | SI(100) | - |
dc.subject.keywordPlus | GROWTH | - |
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