DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sang-Soo | ko |
dc.contributor.author | Kim, Jong Soo | ko |
dc.contributor.author | Di Fabrizio, E | ko |
dc.contributor.author | Gentili, M | ko |
dc.contributor.author | Chung, Hai Bin | ko |
dc.contributor.author | Yoo, Hyung Joun | ko |
dc.contributor.author | Kim, Bo Woo | ko |
dc.date.accessioned | 2013-08-08T04:07:41Z | - |
dc.date.available | 2013-08-08T04:07:41Z | - |
dc.date.created | 2013-07-31 | - |
dc.date.created | 2013-07-31 | - |
dc.date.issued | 1998-05 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, no.5, pp.727 - 730 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174265 | - |
dc.description.abstract | This paper reports on an application of a novel X-ray mask with a back-side alignment mark for fabricating of 0.15-mu m SOI p-MOSFETs in a mix-and-match process of optical and synchrotron radiation X-ray lithography. Optical alignment signals generated from the alignment marks on an X-ray mask and a wafer play an important role in obtaining high alignment accuracy. In this paper, a novel structure of the X-ray mask to improve the alignment signal of the mask and to minimize the optical interference effect on the SiN membrane is discussed. For Karl Suss XRS 200 X-ray stepper, the alignment result for synchrotron radiation lithography with the novel X-ray mask applied to fabricate SOI devices was sigma(x) = 0.023 mu m and sigma(y) = 0.025 mu m. The saturation drain current I-d,I-sat was about 100 mu A/mu m, and the threshold voltage V-T was about 0.4 V. The breakdown voltage BVdss between the source and the drain was measured at V-G = 0 V and I-D = 10 nA was larger than 4 V. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | A novel X-ray mask for mix-and-match of optical and X-ray lithography applied in SOI device fabrication | - |
dc.type | Article | - |
dc.identifier.wosid | 000073671200021 | - |
dc.identifier.scopusid | 2-s2.0-18844406815 | - |
dc.type.rims | ART | - |
dc.citation.volume | 32 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 727 | - |
dc.citation.endingpage | 730 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Yoo, Hyung Joun | - |
dc.contributor.nonIdAuthor | Choi, Sang-Soo | - |
dc.contributor.nonIdAuthor | Kim, Jong Soo | - |
dc.contributor.nonIdAuthor | Di Fabrizio, E | - |
dc.contributor.nonIdAuthor | Gentili, M | - |
dc.contributor.nonIdAuthor | Chung, Hai Bin | - |
dc.contributor.nonIdAuthor | Kim, Bo Woo | - |
dc.type.journalArticle | Article | - |
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