DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sun-Kyu | ko |
dc.contributor.author | Jeong, Yong-Sik | ko |
dc.contributor.author | Lee, Jong-Won | ko |
dc.contributor.author | Yang, Kyoung-Hoon | ko |
dc.date.accessioned | 2013-08-08T03:31:09Z | - |
dc.date.available | 2013-08-08T03:31:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.8, no.4, pp.482 - 486 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | http://hdl.handle.net/10203/174235 | - |
dc.description.abstract | A new multiplexing IC based on the resonant tunneling diode (RTD) is proposed. The unique negative differential resistance characteristics arising from quantum effects of the RTD enable us to develop a new functional low-power digital circuit. The proposed multiplexing IC consists of two current-mode-logic monostable-bistable transition logic elements (CML-MOBILEs) based on the RTD and a low-power selector circuit block. The proposed circuit has been fabricated by using an InP RTD/heterojunction bipolar transistor monolithic microwave integrated circuit technology. The multiplexing operation of the fabricated quantum effect IC has been confirmed up to 45 Gb/s for the first time as a monolithic technology based on the quantum effect devices. The dc power consumption is only 23 mW, which is found to be onefourth of the current state-of-the-art conventional transistor-based multiplexing IC. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DEVICES | - |
dc.subject | MOBILE | - |
dc.subject | CMOS | - |
dc.title | A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000268170900010 | - |
dc.identifier.scopusid | 2-s2.0-67949089581 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 482 | - |
dc.citation.endingpage | 486 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1109/TNANO.2009.2013462 | - |
dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Monostable-bistable logic element | - |
dc.subject.keywordAuthor | multiplexing | - |
dc.subject.keywordAuthor | quantum effect | - |
dc.subject.keywordAuthor | resonant tunneling diode | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | MOBILE | - |
dc.subject.keywordPlus | CMOS | - |
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