A pH sensor with a double-gate silicon nanowire field-effect transistor

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dc.contributor.authorAhn, Jae-Hyukko
dc.contributor.authorKim, Jee-Yeonko
dc.contributor.authorSeol, Myeong-Lokko
dc.contributor.authorBaek, David J.ko
dc.contributor.authorGuo, Zhengko
dc.contributor.authorKim, Chang-Hoonko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-04-11T07:50:07Z-
dc.date.available2013-04-11T07:50:07Z-
dc.date.created2013-04-09-
dc.date.created2013-04-09-
dc.date.issued2013-02-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.102, no.8-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/173455-
dc.description.abstractA pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793655]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectTHRESHOLD VOLTAGE-
dc.subjectINTERFACE-
dc.subjectISFETS-
dc.subjectMODEL-
dc.titleA pH sensor with a double-gate silicon nanowire field-effect transistor-
dc.typeArticle-
dc.identifier.wosid000315597000084-
dc.identifier.scopusid2-s2.0-84874819003-
dc.type.rimsART-
dc.citation.volume102-
dc.citation.issue8-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.4793655-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorKim, Jee-Yeon-
dc.contributor.nonIdAuthorSeol, Myeong-Lok-
dc.contributor.nonIdAuthorBaek, David J.-
dc.contributor.nonIdAuthorGuo, Zheng-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHRESHOLD VOLTAGE-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusISFETS-
dc.subject.keywordPlusMODEL-
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