A pH sensor with a double-gate silicon nanowire field-effect transistor

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A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793655]
Publisher
AMER INST PHYSICS
Issue Date
2013-02
Language
English
Article Type
Article
Keywords

THRESHOLD VOLTAGE; INTERFACE; ISFETS; MODEL

Citation

APPLIED PHYSICS LETTERS, v.102, no.8

ISSN
0003-6951
DOI
10.1063/1.4793655
URI
http://hdl.handle.net/10203/173455
Appears in Collection
EE-Journal Papers(저널논문)
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