Noise and Interference Characterization for MLC Flash Memories
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Moon, Jaekyun | ko |
| dc.contributor.author | No, J. | ko |
| dc.contributor.author | Lee, S. | ko |
| dc.contributor.author | Kim, S. | ko |
| dc.contributor.author | Yang, J. | ko |
| dc.contributor.author | Chang, S. | ko |
| dc.date.accessioned | 2013-03-29T19:29:36Z | - |
| dc.date.available | 2013-03-29T19:29:36Z | - |
| dc.date.created | 2012-11-29 | - |
| dc.date.created | 2012-11-29 | - |
| dc.date.issued | 2012-01-30 | - |
| dc.identifier.citation | International Conference on Computing, Networking and Communications 2012 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/173209 | - |
| dc.description.abstract | This paper provides statistical analysis on real data taken from state-of-the-art MLC NAND flash memory cells. The analysis allows separation of different sources affecting the output values of the cell. Interference due to floating gate coupling is isolated. The effect of noise and interference on the victim cell after repeated program/erase cycles as well as baking is investigated. | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | Noise and Interference Characterization for MLC Flash Memories | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-84859904280 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Conference on Computing, Networking and Communications 2012 | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Hawaii | - |
| dc.contributor.localauthor | Moon, Jaekyun | - |
| dc.contributor.nonIdAuthor | No, J. | - |
| dc.contributor.nonIdAuthor | Lee, S. | - |
| dc.contributor.nonIdAuthor | Kim, S. | - |
| dc.contributor.nonIdAuthor | Yang, J. | - |
| dc.contributor.nonIdAuthor | Chang, S. | - |
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