MOCVD growth and characterization of InGaN/GaN multiple quantum wells on chemically wet-etched porous GaN layers

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Publisher
The 4th Internatinal conference on LED and solid state lighting (LED2010)
Issue Date
2010-02-03
Language
ENG
Citation

The 4th Internatinal conference on LED and solid state lighting (LED2010)

URI
http://hdl.handle.net/10203/171970
Appears in Collection
PH-Conference Papers(학술회의논문)
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