Fabrication and characterization of broad-band light emitting In-rich InGaN/GaN quantum well structures formed on GaN nano-pyramids
- Issue Date
- 2010-07-25
- Language
- ENG
- Citation
The 30th International Conference on the Physics of Semiconductors (ICPS 2010)
- Appears in Collection
- PH-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.