Electrochemical etching of p-Si for the double layer porous silicon fabrication
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, JY | - |
| dc.contributor.author | Lee, Hyuck Mo | - |
| dc.contributor.author | Lee, JH | - |
| dc.date.accessioned | 2013-03-29T14:50:23Z | - |
| dc.date.available | 2013-03-29T14:50:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2010-10-10 | - |
| dc.identifier.citation | 218th ECS Meeting, v., no., pp.1663 - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/171506 | - |
| dc.language | ENG | - |
| dc.title | Electrochemical etching of p-Si for the double layer porous silicon fabrication | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-79955382202 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1663 | - |
| dc.citation.publicationname | 218th ECS Meeting | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Lee, Hyuck Mo | - |
| dc.contributor.nonIdAuthor | Lee, JY | - |
| dc.contributor.nonIdAuthor | Lee, JH | - |
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