The control of 3-dimensional 10nm scale pattern of secondary sputtering lithography by varying poly styrene pattern

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The development of large-area nano-patterning with high resolution, high aspect ratio and simple process scheme/cost is a challenging work for realizing their potential applications in opto-electronics and nano-biotechnology such as nanoelectronics, optics, optical sensing, light-emitting devices and bio-sensing devices. Several approaches towards nanostructure fabrication have been exploited without resorting to expensive tools such as those used in deep-UV projection lithography and electron-beam lithography. We have reported powerful patterning method named secondary sputtering lithography in the past year. This novel patterning technology enables to fabricate the high resolution of complex nanoscale patterns with simple process. The idea arises from the angular distribution of target particles by ion-beam bombardment, which use the ultra-thin nano structure in consistent with side shape of polymer patterns by attaching target materials to the polymer surfaces during accelerated ion-assisted bombardment. Here, we demonstrate that the high resolution of complex nanoscale patterns can be controlled by simple PS treatment process. The PS pattern can be controlled by simple pattern transfer step and reactive ion etching.
Publisher
대한화학회
Issue Date
2011-04-29
Language
KOR
Citation

대한화학회 제107회 총회 및 학술발표회

URI
http://hdl.handle.net/10203/171419
Appears in Collection
CBE-Conference Papers(학술회의논문)
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