DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종민 | - |
dc.contributor.author | 공병선 | - |
dc.contributor.author | 정희태 | - |
dc.date.accessioned | 2013-03-29T13:46:05Z | - |
dc.date.available | 2013-03-29T13:46:05Z | - |
dc.date.created | 2012-07-30 | - |
dc.date.issued | 2011-04-28 | - |
dc.identifier.citation | 대한화학회 제107회 총회 및 학술발표회, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/171135 | - |
dc.description.abstract | Ultralow dielectric constant pSiCOH films have been prepared using allyltrimethylsilane(ATMS) as the skeleton precursor and a porogen precursor. The porogen has been removed from the deposited films by thermal annealing at 420 °C, obtaining films with dielectric constants down to 2.2. The films have been investigated by Fourier transform infrared spectroscopy, and n&k optical measurements of the refractive index (n) and the electrical characteristics have been measured on metal-insulator-semiconductor structures. It was found that the properties of the annealed films depend on the deposition temperature and concentration of porogen. | - |
dc.language | KOR | - |
dc.publisher | 대한화학회 | - |
dc.title | Ultralow dielectric constant Psicoh films prepared with allyitrimethyisllane as skeleton precursor | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 대한화학회 제107회 총회 및 학술발표회 | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | 정희태 | - |
dc.contributor.nonIdAuthor | 박종민 | - |
dc.contributor.nonIdAuthor | 공병선 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.