DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조혜미 | - |
dc.contributor.author | 양승보 | - |
dc.contributor.author | 김대우 | - |
dc.contributor.author | 윤상천 | - |
dc.contributor.author | 정희태 | - |
dc.date.accessioned | 2013-03-29T13:39:55Z | - |
dc.date.available | 2013-03-29T13:39:55Z | - |
dc.date.created | 2012-07-30 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.citation | 2011 춘계학술대회 , v.36, no.1, pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/171096 | - |
dc.description.abstract | Graphene-quantum dot (G-QD) composites for transparent and optoelectronic films were fabricated via hybridization between chemically modified graphene (CMG) and functionalized CdSe/ZnS QDs. Here, we examined the effect of the conductivity of graphene on the phosensitivity of transparent optoelectronic G-QD films from Layer-by-Layer (LBL) techniques. The G-QD hybrid films were characterized optically and electrically by using optical absorption, photoluminescence, 4-point probe and digital multimeter measurements. The scanning electron microscope (SEM), the high-resolution transmission electron microscope (HRTEM) and atomic force microscope (AFM) were used to observe surface morphologies of G-QD films. | - |
dc.language | KOR | - |
dc.publisher | 한국고분자학회 | - |
dc.title | Fabrication of Graphene-Quantum Dot hybrid films for photodetectors | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 1 | - |
dc.citation.publicationname | 2011 춘계학술대회 | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | 정희태 | - |
dc.contributor.nonIdAuthor | 조혜미 | - |
dc.contributor.nonIdAuthor | 양승보 | - |
dc.contributor.nonIdAuthor | 김대우 | - |
dc.contributor.nonIdAuthor | 윤상천 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.